Event Name October 6-10, 2008: IWN2008(Montreux ,Switzerland)
Region
Location
Dates Oct.5, 2008 ~ Oct.10, 2008
Exhibitors
Visitors
Website

October 6-10, 2008: The International Workshop on Nitride semiconductors (IWN2008) to be held in Montreux, Switzerland.

Name

IWN 2008

Venue

Montreux Switzerland

Dates

6-10 October 2008

Organizers

IWN2008 is organized by the Ecole Polytechnique Fédérale de Lausanne (EPFL), with the support of the Swiss National Science Foundation and the Swiss National Center of Competence in Quantum Photonics.

 

Organization committee

 

Chair:

  Nicolas Grandjean (EPFL, Switzerland)

 

Co-Chair

  Marc Ilegems (EPFL, Switzerland)

 

Program committee chair:

  Tadeusz Suski (Unipress, Poland)

 

Publications chair:

  Raphaël Butté (EPFL, Switzerland)

 

Secretariat and local arrangements:

  Aline Gruaz (EPFL, Switzerland)

  Denis Martin (EPFL, Switzerland)

  Carole Preciado (EPFL, Switzerland)

  Jelena Ristic (EPFL, Switzerland)

Sponsor(s)

AIXTRON

Sony

CREE

Sharp

TOYODA GOSSI

NICHIA

OSRAM

RIBER

Veeco

LAYTEK

LUMILEDS

Newport

General information

The International Workshop on Nitride semiconductors (IWN2008) to be held in Montreux, Switzerland will be the fifth in a series of biennial workshops following those organized in Nagoya, Aachen, Pittsburgh, and Kyoto.

 

The objective of the Workshop is to provide a forum for presenting state of the art results and latest advances in research and technology of nitride- and related wide-bandgap semiconductors. The format of the workshop provides for the presentation of invited and contributed lectures in plenary sessions and for poster presentations during the first two days of the meeting, followed by two days of focused workshops on specific topics of nitride research. Finally, the main conclusions of the workshop sessions will be presented in the closing day of the conference, so as to share the information among all participants.

 

All sessions will take place in the Montreux Music and Convention Center, which also hosts the industrial exhibition and the poster sessions, ensuring optimal conditions for contacts and interactions between the participants.

Topical Workshops:

The parallel workshop sessions will be organized along the following themes:

 

Substrates for nitride epitaxy (GaN bulk crystal, free-standing GaN, nonpolar substrates, oxide and metallic substrates, diamond, others.)

 

Challenging materials issues

    a. InN and high In content alloys

    b. AlN and high Al content alloys

    c. Non-polar epitaxy

 

Nanostructures (quantum wells, quantum dots, nanocolumns, nanowires, …): growth and characterization

 

Novel physical concepts and devices (spintronics, plasmonics, microcavities, photonic crystals, rare-earth dopants, electro-opto-mechanical devices)

 

Opto 1: Materials and physics (localization effects, structural characterization, quantum heterostructures, …)

 

Opto 2: Technology and devices (device processing, LED and laser performance, light extraction, high current injection, thermal management, packaging, …)

 

Electronic devices (2DEG transport, HEMT and bipolar transistors, technology, sensors, high power switches, …)

Contact

Contact personDr Jelena Ristic

E-mailexhibition.iwn2008@epfl.ch.

AddressStation 3, Physics Building, EPFL, 1015 Lausanne, Switzerland

For more information, please visit the IWN2008 website: http://iwn2008.epfl.ch/

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