Cree Shipped More than Two Million GaN HEMT Equipments for Cellular Telecommunications

Cree announced that it had shipped more than two million GaN high electron mobility transistors (HEMT) for cellular telecommunications and provided game-changing benefits over traditional silicon-based technologies, involving higher power, higher efficiency and wider bandwidth. As mobile devices like smart phones are used more widely around the world, telecommunications companies are looking for innovative technologies to enhance channel capacity and the speed of wireless systems, while simultaneously lowering power consumption of transmission amplifiers. The use of GaN HEMT in transmitter amplifiers is gaining attention in the cellular telecommunications industry due to the ability to reduce power consumption and size, and improve bandwidth capabilities.

The world's mobile networks are reported to consume about 120TWh of electricity per year (for an average cost of US$14.4 billion), and 50% of the networks power is consumed by power amplifiers and associated components. Consequently, the improved power amplifier efficiency can save considerable energy.

Tom Dekker, Director of Sales and Marketing for RF Products at Cree, said that wireless telecommunication leaders are leveraging the performance advantages of Cree's GaN HEMTs and Cree is very pleased that it achieved its two millionth GaN HEMT cellular telecom shipment milestone. The prices of GaN HEMT have increased greatly and are now a viable alternative to Si LDMOS transistors for cellular telecom amplifiers. Cree targets the continuous growth of its telecommunication volumes.

The next-generation performance enabled by Cree GaN HEMT is asked to support today's 4G LTE cellular networks, as well as to help drive LTE release 10 and advanced LTE networks currently being developed. The superior efficiency and bandwidth advantages of GaN HEMTs help LTE cellular network transmitters to achieve smaller size, lower weight and the improved thermal management compared with incumbent technologies. GaN HEMT power amplifiers allow for data channel bandwidths over 100 MHz and wide instantaneous RF bandwidths, helping operators aggregate multiple, non-adjacent frequencies to maximize the benefits of their licensed spectrum. Another significant advantage is the improved transmitter efficiency, which can save tremendous energy for operating budgets.

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