AIXTRON SE announced that National Chung Hsing University (NCHU) in Taiwan, has placed an order for one Close Coupled Showerhead (CCS) MOCVD system in a 3x2-inch wafer configuration.

NCHU will use the CCS system for conducting research into the hetero-epitaxial growth of Gallium Nitride alloys on Silicon wafers (“GaN-on-Si”). One of AIXTRON´s local service support teams has already installed and commissioned the new reactor in a dedicated cleanroom facility at NCHU’s site in Taichung, Taiwan. Prof. Wuu of the Department of Materials Science and Engineering at NCHU, comments: “AIXTRON’s Close Coupled Showerhead system is the ideal choice for the study of GaN-on-Si. This is not only my opinion from my years of familiarity with the technical challenges of these materials, but also the consensus of many leading researchers around the world who are using the AIXTRON MOCVD system.” Prof. Horng of Graduate Institute of Precision Engineering at NCHU, adds: “The reactor has demonstrated its versatility, ease of operation and reproducibility over the range of parameters of interest to us, we therefore will be able to produce high-quality GaN-on-Si epilayers and other novel structures.”

Since 2001, the research team leaded by Profs. Wuu and Horng at NCHU has developed many unique LED technologies for both GaN and AlGaInP materials. Today, their integrated laboratory from epitaxial growth to device processing and packaging has established itself as one of the leading research center in Taiwan. Many of its successful academic-industry cooperation projects have also been awarded by the National Science Council of Taiwan.

National Chung Hsing University (NCHU) is the only state-run university in central Taiwan that offers a comprehensive choice of both research and taught curriculum programmes. NCHU has been investing in three centers of research excellence including biotechnologies, nano-biomimetics and advanced industrial precision instrumentation technologies, as it strives to become a world-class university over the next five years.