Toshiba Corporation’s Semiconductor & Storage Products Company today announced the addition of 4 new products to its line-up of the “TL1L4 series” of high power white LEDs, that achieve high luminous flux of 140lm(min.). Shipment of the new products starts from today.

Toshiba high power white LEDs for LED lighting; "TL1L4 series (4A5B type)" (Toshiba/LEDinside)

The new “TL1L4 series (4A5B type)” achieve a high luminous flux of 140lm(min.) ^[1]compared to the 130lm(min.) of conventional general products of the “TL1L4 series”. The 4 new products are in correlated color temperatures (CCT) of 6500K/5700K/5000K/4000K with a color rendering index of Ra70. The new products make it possible to achieve market requirements of lighting fixture efficacy over 110lm/W^[2], and can contribute to improving luminous efficacy and lower power consumption of LED lighting applications.

Key Features of the New Products:*Test conditions: I_F=350mA, T_j=85°C (Hot binning)
*Luminous Flux @T_a=25°C is reference value.
*The characteristic table above is presented for typical value.

* Utilizes GaN-on-Si technology^[3] developed for LED lighting
* 3.5 x 3.5mm lens-top package
* Luminous flux/forward voltage/chromaticity/color rendering index(Ra) are sorted @I_F=350mA, T_j=85°C.
* Luminous flux: 140lm(min.) @I_F=350mA, T_j=85°C
   (165lm@I_F=350mA, T_a=25°C)
* Forward voltage: V_F=2.8V@I_F=350mA, T_j=85°C
* Color temperature variation: 6500K/5700K/5000K/4000K

Applications:
Street lights, flood lights, LED light bulbs and down lights

Notes:
[1] Test conditions: I_F=350mA, T_j=85°C
[2] Under conditions of 90% driver efficiency, 90% optical efficiency, Tj=85°C
[3] Technology to produce gallium nitride (GaN) on silicon (Si) wafers.

Follow this link for more on this product.
http://toshiba.semicon-storage.com/ap-en/product/opto/white-led.html