Leti, a research institute of CEA Tech, today announced
it has developed a μLED fabrication process to create high-resolution arrays at 10-micron pitch.
(Leti/ LEDinside)
The pixelization and its 873 × 500-resolution are designed for micro-display applications such as augmented-reality or virtual-reality tools and wearable devices. The blue or green GaN/InGaN µLED arrays use Leti’s proprietary self-aligned technology, which is key to achieving such a small pixel pitch.
A combination of several damascene metallization steps are used to create a common cathode and expected to provide good thermal dissipation and prevent voltage drops within the micro-LED matrix. Electro-optical measurements showcase record efficiency and brightness exceeding requirements for device integration.
The results were presented Feb. 2 at SPIE Photonics West in San Francisco in a paper: “Processing and Characterization of High-Resolution GaN/InGaN LED Arrays at 10-Micron Pitch for Micro-Display Applications”.
“Leti’s self-aligned process allows the creation of high-resolution μLED matrices with a reduced pixel pitch of 10 μm and paves the way towards even smaller pitches for next-generation devices,” said Ludovic Dupré, one of the paper’s authors.
“In addition, the use of the damascene metallization process of the cathode, which also is a new process developed at Leti, is a breakthrough compared to previous demonstrations of micro-LED matrices. The common cathode indeed fills the whole volume between the micro-LEDs and provides metallic spreading of electrical current between them, as well as thermal dissipation. These results are promising for integrating a micro-LED matrix in micro-display devices by hybridization on CMOS active matrices, and first prototypes are currently being tested.”
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