| |   Management | Member Center | Contact Us RSS facebook google+ twitter linkedin mobile web     CN TW EN

Home > GaN HEMT Transistor
2014-05-09

Cree Announces GaN HEMT Transistors to Support Data-Hungry Small Cell Networks

As high data rate applications put more strain on LTE wireless networks, innovative solutions such as small cell base stations (BTS) and carrier aggregation will be needed to bridge the bandwidth gap in high traffic areas. In response to broader bandwidth demand, Cree, Inc. introduces a family of GaN HEMT RF transistors that delivers industry-leading bandwidth and high efficiency performance to support today’s busy LTE networks. 
Continue reading →
Weekly Top7
Monthly Top7
FEATURED PRODUCTS
[News] Optimized IR Lasers from ams OSRAM — Ideal for Particularly Demanding 3D Sensor Applications

The number of modern applications using 3D sensor technologies is steadily increasing, including ambient sensing for industrial robots, various face recognition applications, object detection, and machine vision. Vertical Cavity Surface Emitti... READ MORE

[News] Nichia's High-power 280nm UV LED Has Been Chosen by Shikoku Kakoki Co., Ltd. for Their Food and Beverage Filling Machines

Nichia, the world's largest LED manufacturer and inventor of the high-brightness blue and white LED, is pleased to announce that a UV-C LED disinfection device manufactured by Mutoh Industries Ltd., equipped with Nichia's high-power 28... READ MORE

PRESS RELEASE