2014-06-10

Sumitomo to Expand GaN-on-SiC Device Production with AIXTRON System

Sumitomo Electric Device Innovations, Inc. (SEDI), Japan, has ordered an AIXTRON CRIUS MOCVD system to be delivered with 4-inch wafer configuration in order to boost production of gallium nitride on silicon carbide devices for RF data transfer applications. The purchase was made in the first quarter of 2014 for delivery at SEDI’s Electron Devices Division in Yokohama in the third quarter.
Continue reading
ams OSRAM is launching two new variants of the SIRIUS HRI® series for entertainment lighting. The compact Galaxy 250 and 20D short-arc HID lamps combine exceptional brightness, longer service life, and outstanding performance. Precise 2&de... READ MORE

Following the successful launch of the NIGHT BREAKER LED SMART ECE H11 for headlights, ams OSRAM (SIX: AMS) is continuing its series of innovative LED retrofit solutions. In addition to the new NIGHT BREAKER LED C5W ECE, the first ECE R37-appr... READ MORE