2017-05-16

EpiGaN to Showcase its 200mm GaN-on-Si Epi Wafers for 650V Power Switching and RF Power Applications

EpiGaN n.v., a worldwide provider of III-nitride epitaxial material solutions for advanced semiconductor manufacturing, will showcase the latest enhancements of its Gallium Nitride on Silicon epi-wafer family that meets industrial specifications for HEMT (High Electron Mobility Transistor) devices at 650V at PCIM Europe 2017 in Nuremberg, Germany, (May 16- 18, 2017) as ell as at CSMantech in Indian Wells, California, USA (May 22-14, 2017). 
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2014-06-10

Sumitomo to Expand GaN-on-SiC Device Production with AIXTRON System

Sumitomo Electric Device Innovations, Inc. (SEDI), Japan, has ordered an AIXTRON CRIUS MOCVD system to be delivered with 4-inch wafer configuration in order to boost production of gallium nitride on silicon carbide devices for RF data transfer applications. The purchase was made in the first quarter of 2014 for delivery at SEDI’s Electron Devices Division in Yokohama in the third quarter.
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Violumas, provider of high-power UV LED solutions and inventor of 3-PAD LED technology, is proud to announce the release of new 255nm LEDs in mid-power, high-power, and high-density packages. The addition of 255nm LEDs to Violumas’ exten... READ MORE

ISE 2025, the largest European system integration trade show, marks a significant highlight for the LED display industry at the start of the year. Macroblock is excited to debut a new series of products and collaborate with industry leaders su... READ MORE