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Home > RF industry
2014-06-10

Sumitomo to Expand GaN-on-SiC Device Production with AIXTRON System

Sumitomo Electric Device Innovations, Inc. (SEDI), Japan, has ordered an AIXTRON CRIUS MOCVD system to be delivered with 4-inch wafer configuration in order to boost production of gallium nitride on silicon carbide devices for RF data transfer applications. The purchase was made in the first quarter of 2014 for delivery at SEDI’s Electron Devices Division in Yokohama in the third quarter.
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[News] CreeLED Inc. Files Patent Infringement Lawsuit Against NanoLumens, Inc.

Cree LED, a Penguin Solutions brand (Nasdaq: PENG), today announced that it has filed a patent infringement lawsuit in the United States District Court for the Northern District of Georgia against NanoLumens, Inc. The lawsuit asserts that Nano... READ MORE

[News] Lighting the Future: WG Tech’s Precision Glass MiniLED Breakthrough

WG Tech recently held an in-depth online discussion with Dr. Adi Abileah, former Chief Scientist at Planar Systems and a SID Fellow, to exchange insights on glass substrate based MiniLED technology innovation. Dr. Abileah, a globally respected... READ MORE

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