2015-08-24

Toyoda Gosei Researchers Makes Breakthrough in GaN Nanoelectronics-transistor Blocking Voltage

Research reported in Applied Physics Express (APEX) by Tohru Oka and colleagues at the Research and Development Headquarters for TOYODA GOSEI Co., Ltd in Japan describe the development of ‘vertically orientated’ GaN-based transistors with blocking voltages exceeding 1kV. These findings are important for the application of nitride devices in automobiles and related areas. 
Continue reading

The number of modern applications using 3D sensor technologies is steadily increasing, including ambient sensing for industrial robots, various face recognition applications, object detection, and machine vision. Vertical Cavity Surface Emitti... READ MORE

Nichia, the world's largest LED manufacturer and inventor of the high-brightness blue and white LED, is pleased to announce that a UV-C LED disinfection device manufactured by Mutoh Industries Ltd., equipped with Nichia's high-power 28... READ MORE