2015-08-24

Toyoda Gosei Researchers Makes Breakthrough in GaN Nanoelectronics-transistor Blocking Voltage

Research reported in Applied Physics Express (APEX) by Tohru Oka and colleagues at the Research and Development Headquarters for TOYODA GOSEI Co., Ltd in Japan describe the development of ‘vertically orientated’ GaN-based transistors with blocking voltages exceeding 1kV. These findings are important for the application of nitride devices in automobiles and related areas. 
Continue reading

ams OSRAM, a global leader in intelligent sensor and emitter technologies, has filed a patent infringement complaint in the United States against Spider Farmer, a manufacturer of indoor farming luminaires, and has also taken further action bas... READ MORE

Recently, the world’s largest monolithic LED virtual production volume—jointly developed by Absen and Versatile Media—made a high-profile debut, drawing widespread attention across the industry and beyond. As a global leader ... READ MORE