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2016-01-19

Plessey, Anvil Semiconductors and University of Cambridge Aim to Overcome the Green Gap with GaN on 3C-SiC/Si LEDs

The collaboration, which is partly funded by Innovate UK under the £14m Energy Catalyst Programme, follows on from work by Anvil Semiconductors and the Cambridge Centre for GaN at the University of Cambridge where they successfully grew cubic GaN on 3C-SiC on silicon wafers by MOCVD. The underlying 3C-SiC layers were produced by Anvil using its patented stress relief IP that enables growth of device quality silicon carbide on 100mm diameter silicon wafers.  
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