2020-02-05

CEA-Leti Develops Silicon Nitride 200mm Platform to Develop High-Power Photonics in UV through Mid-Infrared Wavelengths

CEA-Leti announced at Photonics West 2020 its new development of a silicon nitride (Si3N4) 200mm platform for developing photonics in UV through mid-infrared wavelengths. Available in CEA-Leti's SiN platform in a multi-project-wafer program, the breakthrough targets designers in integrated quantum optics, LiDAR, biosensing, and imaging whose projects require ultralow propagation losses and high-power handling capability. (Image: CEA-Leti) According to CEA-Leti, this ultralow-loss SiN layer is available for multi-level photonic circuits. It can be c...
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DURHAM, NC – November 12, 2024 –– Cree LED, a Penguin Solutions brand (Nasdaq: PENG), today announced the launch of its new CV28D LEDs with FusionBeam™ Technology, a groundbreaking advancement for the LED signage market... READ MORE

The new IR:6 thin-film infrared LED chip technology is available in 850nm, 940nm and new 920nm wavelength options First IR:6-based products are the OSLON® P1616 and OSLON® Black series, giving customers a drop-in replacement that o... READ MORE