2021-12-17

Cranking Up The Growth Temperature Of Red InGaN LEDs

Intentional decomposition of an InGaN layer provides a foundation for high-temperature growth of red-emitting quantum wells Researchers at the University of California, Santa Barbara (UCSB), claim to have broken new ground by increasing the temperature employed for the growth of red-emitting InGaN LEDs. This breakthrough comes from introducing a relaxed InGaN buffer. The approach by the West-coast team differs from the norm, which is to grow re-emitting InGaN-based LEDs at a considerably lower temperatures than their green and blue siblings. While growt...
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Strawberries flourish in a Controlled-Environment Agriculture Installation with Horticulture LED lighting provided by Cree LED and RED Horticulture. (Photo courtesy of RED Horticulture) The integration of technology into every aspect of life i... READ MORE

The prior blog titled “Nichia’s contribution to a realization of a mercury-free society” took a short break. However, there was a release about new LED-based water disinfection devices made by Miura Co., Ltd., a Japanese manu... READ MORE