Intentional decomposition of an InGaN layer provides a foundation for high-temperature growth of red-emitting quantum wells Researchers at the University of California, Santa Barbara (UCSB), claim to have broken new ground by increasing the temperature employed for the growth of red-emitting InGaN LEDs. This breakthrough comes from introducing a relaxed InGaN buffer. The approach by the West-coast team differs from the norm, which is to grow re-emitting InGaN-based LEDs at a considerably lower temperatures than their green and blue siblings. While growt...