2012-07-18

EpiGaN Successfully Utilizes AIXTRON MOCVD Reactors to Develop 8-inch GaN-on-Si Wafers

AIXTRON SE announced that EpiGaN, a new customer and a start-up manufacturer of III-Nitrides epitaxial material in Hasselt, Belgium, has successfully commissioned two new MOCVD systems, able to operate either in multiple 6” or in 8” configuration. It will use the systems to commercialize 6-inch GaN-on-Silicon wafers for a range of power and RF electronics devices as well as to develop the next generation of 200 mm GaN-on-Silicon wafers. The reactors were installed and commissioned by AIXTRON Europe’s service support team at the co...
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Nichia, the world's largest LED/Laser Diode manufacturer and inventor of the high-brightness blue and white LEDs, and Tokushima Agriculture, Forestry and Fisheries Technology Support Center have conducted a joint research study to evaluate... READ MORE

Signify, the world leader in lighting, announced that it has installed Philips GreenPower LED toplighting compact in the lettuce nursery greenhouse of Woodeumgee Farm Co., Ltd., located in Buyeo, Chungcheongnam-do. Woodeumgee Farm has reported... READ MORE