2012-07-18

EpiGaN Successfully Utilizes AIXTRON MOCVD Reactors to Develop 8-inch GaN-on-Si Wafers

AIXTRON SE announced that EpiGaN, a new customer and a start-up manufacturer of III-Nitrides epitaxial material in Hasselt, Belgium, has successfully commissioned two new MOCVD systems, able to operate either in multiple 6” or in 8” configuration. It will use the systems to commercialize 6-inch GaN-on-Silicon wafers for a range of power and RF electronics devices as well as to develop the next generation of 200 mm GaN-on-Silicon wafers. The reactors were installed and commissioned by AIXTRON Europe’s service support team at the co...
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ams OSRAM (SIX: AMS) has reached another important milestone in automotive lighting now that the new OSRAM XLS LR6 LED is ready for series production. This innovative solution enables car manufacturers to create impressive lighting designs wit... READ MORE

New CT sensor modules from ams OSRAM advance the medical imaging technology across the CT market segments. With two new sensor modules, ams OSRAM (SIX: AMS), a global leader in intelligent sensors and emitters, demonstrates its commitment to C... READ MORE