2012-07-18

EpiGaN Successfully Utilizes AIXTRON MOCVD Reactors to Develop 8-inch GaN-on-Si Wafers

AIXTRON SE announced that EpiGaN, a new customer and a start-up manufacturer of III-Nitrides epitaxial material in Hasselt, Belgium, has successfully commissioned two new MOCVD systems, able to operate either in multiple 6” or in 8” configuration. It will use the systems to commercialize 6-inch GaN-on-Silicon wafers for a range of power and RF electronics devices as well as to develop the next generation of 200 mm GaN-on-Silicon wafers. The reactors were installed and commissioned by AIXTRON Europe’s service support team at the co...
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Seoul Viosys, a global opto-semiconductor device company, announced that it is participating in K-Display 2026, held at COEX in Seoul from July 22 to 24, where it is showcasing next-generation opto-semiconductor technologies and has received t... READ MORE

What Is RGB Backlight? A Next-Generation Display Technology That Enhances Color Gamut and Optical Efficiency with RGB LEDs Competition in the display industry is expanding beyond brightness and resolution to include color accuracy and energy e... READ MORE