2012-12-27

BluGlass Utilizes RPCVD Process to Develop p-type GaN Layers for LEDs

BluGlass has utilized its low temperature RPCVD process to develop p-type GaN, an essential material that make up the top layers of a nitride LED.   Preliminary testing has been carried out on the sample using a 0.5mm diameter size p-type indium contact. The light output was measured with a UV-detector positioned under the wafer calibrated at the wavelength of the light emission. At 20mA and 4.7V, the light output was 270µW (light emission at 458nm with a full width half maximum of 19nm) At 50mA and 5.5V, the light output was 1.23mW (light emission ...
Continue reading
ams OSRAM, a global leader in innovative light and sensor solutions today held a roundtable forum spotlighting new opportunities with high precision illumination characterization. The event brought together experts from industry, academia, and... READ MORE

ams OSRAM introduces the new generation of the NIGHT BREAKER LED SPEED H7 and the first NIGHT BREAKER LED SPEED H4 which is another milestone in the field of LED retrofit lamps. Both road-approved¹ retrofit solutions carry the addition up... READ MORE