2012-12-27

BluGlass Utilizes RPCVD Process to Develop p-type GaN Layers for LEDs

BluGlass has utilized its low temperature RPCVD process to develop p-type GaN, an essential material that make up the top layers of a nitride LED.   Preliminary testing has been carried out on the sample using a 0.5mm diameter size p-type indium contact. The light output was measured with a UV-detector positioned under the wafer calibrated at the wavelength of the light emission. At 20mA and 4.7V, the light output was 270µW (light emission at 458nm with a full width half maximum of 19nm) At 50mA and 5.5V, the light output was 1.23mW (light emission ...
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Macroblock and Juxin Optoelectronics successfully held 2026 LED Display Symposium at the Shenzhen Marriott Hotel. In addition to the main-stage sessions, which focused on display industry trends and technology sharing, the exhibition area feature... READ MORE

Signify, the world leader in lighting, announces that Kwekerij Bolleboom in Bleiswijk and Kwekerij Bazuin in Pijnacker in the Netherlands are investing in Philips GreenPower LED toplighting force elite and Philips GrowWise control for their cu... READ MORE