Japanese NGK Shows GaN Substrates for HB-LEDs

Japanese based company NGK Insulators has released new wafer products for electronic device applications in ultra high brightness (UHB) LEDs. It has showcased at SEMICON Japan 2011 held between December 7 through 9 at Makuhari Messe in Chiba for the first time.

The company targets wafer products as a major research and development theme in the electronics field.

In the R&D line-up, there are bonded wafers that achieve new functions previously unavailable with a single material wafer, and GaN single crystal wafers that have low defect density and colourless transparency over the whole wafer surface.

The innovative feature of the product is realised by original liquid phase epitaxial growth technology. NGK reckons its GaN wafer has an unprecedented high, efficient luminescence, which makes UHB-LEDs applicable for business projectors and headlights of automobiles. Application for power devices used in hybrid and electric vehicles is also anticipated.

Additionally, it has also accelerated the development of wafer products including wafers for next-generation semiconductors which do not include rare metals.

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