Veeco Instruments announced that the Fraunhofer Institute for Applied Solid State Physics IAF, a leading German compound semiconductor research institution, has purchased a TurboDisc® K465i Gallium Nitride (GaN) MOCVD System. 

Located in Freiburg, Germany, Fraunhofer conducts cutting-edge research in the field of III-V semiconductors. They develop electronic and optoelectronic devices based on modern micro and nanostructures for applications such as security, energy, communication, health, and mobility.

“After more than a decade of research in the field of nitride epitaxy on sapphire, silicon and silicon-carbide substrates, we have decided to upgrade our operation to include Veeco’s MOCVD technology,” said Dr. Martin Walther, Head of the Epitaxy Department and Deputy Director at Fraunhofer.  “The K465i offers a clean process and exceptional run-to-run repeatability that will enable us to achieve new levels of development in high growth markets.” 

Veeco’s award-winning K465i MOCVD systems feature excellent film quality, low defects and high productivity, which are key for effective GaN processing. The system also incorporates Veeco's Uniform FlowFlange® technology for superior uniformity and excellent run-to-run repeatability. Since its introduction in 2010, the K465i has been the top selling MOCVD system worldwide.

“Being selected by a leading compound semiconductor institution such as Fraunhofer Institute is further evidence that Veeco’s leading MOCVD systems are the ideal solution for various GaN-based epitaxy applications,” said Jim Jenson, Senior Vice President, General Manager, Veeco MOCVD.   “We strive to provide innovative process solutions, including the recent introduction of the Propel™ PowerGaN™ MOCVD system for power electronics devices. As we innovate, our TurboDisc and Propel platforms provide outstanding performance for compound semi R&D and production leaders.”