EpiGaN n.v., a worldwide provider of III-nitride epitaxial material solutions for advanced semiconductor manufacturing, will showcase the latest enhancements of its Gallium Nitride on Silicon epi-wafer family that meets industrial specifications for HEMT (High Electron Mobility Transistor) devices at 650V at PCIM Europe 2017 in Nuremberg, Germany, (May 16- 18, 2017) as ell as at CSMantech in Indian Wells, California, USA (May 22-14, 2017).