2018-02-05

IEMN Shows More Than 1400 V on ALLOS’ New GaN-on-Si Epiwafer Product

Latest results from IEMN show more than 1400 V breakdown voltage for both vertical and lateral measurements on ALLOS’ upcoming GaN-on-Si epiwafer product for 1200 V devices.  
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ams OSRAM, a global leader in intelligent sensor and emitter technologies, has filed a patent infringement complaint in the United States against Spider Farmer, a manufacturer of indoor farming luminaires, and has also taken further action bas... READ MORE

Recently, the world’s largest monolithic LED virtual production volume—jointly developed by Absen and Versatile Media—made a high-profile debut, drawing widespread attention across the industry and beyond. As a global leader ... READ MORE