SMART Uses Intrinsic Defects to Form Indium-rich Quantum Dots Yielding Long-wavelength InGaN LEDs

Together with collaborators at the Massachusetts Institute of Technology (MIT), National University of Singapore (NUS) and Nanyang Technological University (NTU), researchers at the Low Energy Electronic Systems (LEES) Interdisciplinary Research Group (IRG) at Singapore-MIT Alliance for Research and Technology (SMART, a partnership between the Massachusetts Institute of Technology and the National Research Foundation of Singapore) have discovered a new method of generating long-wavelength (red, orange and yellow) light through the use of in...
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Red InGaN μLEDs for Displays

University of California Santa Barbara (UCSB) in the USA suggests that indium gallium nitride (InGaN) red micro-sized light-emitting diodes (μLEDs) could provide a solution for displays [Panpan Li et al, Appl. Phys. Lett., v119, p081102, 2021].   Although the high indium content leads to relatively low external quantum efficiency (EQE) compared with commercial aluminium indium gallium phosphide (AlInGaP) regular-size LEDs, which can reach 20-30%, the UCSB research shows that the InGaN devices maintain their ~2.5% EQE as the dimensio...
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Stacking Three III-Nitride LEDs

Ohio State University and Sandia National Laboratories in the USA claim the first demonstration of triple-junction cascaded III-nitride light-emitting diodes (LEDs) grown by metal-organic chemical vapor deposition (MOCVD) [Zane Jamal-Eddine et al, Appl. Phys. Express, v14, p092003, 2021]. Stacking LEDs is one way to overcome the limitations in output power density imposed by the effects of efficiency droop at large current density. Tunnel-junction (TJ) structures are used to connect LEDs since they enable electron majority carriers to be transformed to ...
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Vishay 0603 Green LED Shines Up to 2.8cd

Using what it calls the “most recent ultra-bright InGaN chip technology”, Vishay has announced green 0603 leds producing up to 2.8cd (or 2,800mcd as it puts it).
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Danish Researchers: Nanowires Could Become the Future for LEDs

The latest research from the Niels Bohr Institute shows that LEDs made from nanowires will use less energy and provide better light. The researchers studied nanowires using X-ray microscopy and with this method they can pinpoint exactly how the nanowire should be designed to give the best properties. The results are published in the scientific journal, ACS Nano.
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National Taiwan University orders AIXTRON MOCVD tool for R&D on white LEDs

AIXTRON AG reported that in the fourth quarter 2008 the National Taiwan University (NTU) of Taiwan ordered one Close Coupled Showerhead 3x2" wafer Research Platform MOCVD system for research and development on GaN and related materials and devices and it will be delivered in the third quarter 2009.  
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Intematix blue-excited amber LEDs raise efficiency mark by 70-250%

It’s reported that Intematix Corp.has added an amber-color LED family to its growing line of packaged device solutions. Its new amber-color product line leverages Intematix' patented phosphor technologies in combination with InGaN blue LED chips to create the breakthrough product family. Blue-excited amber LEDs offer substantial increases in efficiency and temperature stability compared to traditional AlInGaP-based amber LED technologies. Follow-on blue-excited color LED families are also under development.  
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NF2W585AR-P8 is a dual function LED that provides both white light and high doses of energy geared for inactivation of various prevalent bacteria. With a 405nm wavelength1 die known to be effective in sterilization, this LED can be used t... READ MORE

  The 5050 LED is replacing the 3535 LED, which has long been the leader in the outdoor lighting market. The existing ceramic-based 3535 has excellent reliability but is expensive. At present, the 5050 LED, which has achieved remarkable p... READ MORE