The II-VI Laser Enterprise Division of II-VI Incorporated, a leading provider of high-power semiconductor laser components, today unveiled a new generation of high power 1060 nm single-mode laser diode seed module.
The new II-VI laser diode module is designed to seed nanosecond pulsed fiber lasers addressing the fast-growing market for MOPA (master oscillator power amplifier) fiber lasers. The innovative module delivers kink-free power up to 1.5 W in nanosecond pulse operations, enabling highly-efficient pulse amplification and improved frequency conversion for the best beam quality and throughput in fiber laser systems.
“With 40% more pulse power compared to our previous offering, our new diode seed module enables the next generation fiber laser systems for a wide range of applications,” said Karlheinz Gulden, General Manager, II-VI Laser Enterprise. “Together with our distributed feedback laser diode module designed for sub-nanosecond operations, we offer customers the most comprehensive seed laser diode portfolio in the market.”
The II-VI laser diode seed module features a higher power 1060 nm Fabry-Perot single-mode laser diode chip and a standard cooled telecom 10-pin mini butterfly type package that includes a thermistor and back-facet monitor photodiode. The 75% smaller form factor of the mini butterfly package versus the legacy 14-pin version enables a reduction of overall footprint of the seed assembly. A broad- or narrow-band Fiber Bragg Grating is optionally available to control the spectral properties for the suppression of Stimulated Brillouin Scattering (SBS) or for the improvement of frequency conversion performance, respectively.
II-VI Laser Enterprise will showcase the new laser diode seed module at SPIE Photonics West, Feb. 16-18, 2016, in San Francisco, CA, in Hall C, Booth # 2223.