Researchers at the University of Tokyo published a research demonstrating their achievement of the highest mobility among thin films of tin dioxide. This high mobility could allow engineers to create thin and even transparent tin dioxide semiconductors for use in next-generation LED lights, photovoltaic solar panels or touch-sensitive display technologies.

Tin dioxide can be made into a semiconductor. A research team from the Department of Chemistry at the University of Tokyo demonstrated the highest mobility in a thin film of tin oxide ever achieved. The improved mobility not only enhances the conductivity but also the transparency of the material.

(A focused laser is used to create thin films of tin dioxide, image: 2020 Nakao et al.)

Researcher Shoichiro Nakao and his team have made a tin oxide thin film that allows visible light and near-infrared light to pass. This is a great benefit to the power conversion efficiency of photovoltaic solar panels, but other uses could include enhanced touch-screen displays with even better accuracy and responsiveness, or more efficient LED lights.

"Our method of production was key to creating a substance with these properties. We used a highly focused laser to evaporate pellets of pure tin dioxide and deposit or grow material exactly how we wanted it," said Nakao. "Such a process allows us to explore different growth conditions as well as how to incorporate additional substances. This means we can endow tin dioxide semiconductors with high mobility and useful functionality."